・Photoluminescence study of GaN/InGaN multiquantum well structures at room temperature, S. Saito, M. Onomura, J. Nishio, L. Sugiura, K. Itaya, H. Sugawara, M. Ishikawa, Journal of Crystal Growth Vol. 189, pp. 128-132, 1998

・Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers, L. Sugiura, K. Itaya, J. Nishio, H. Fujimoto, Y. Kokubun, Journal of Applied Physics Vo. 82, No. 10, pp. 4877-4882, 1997

・Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes, J. Nishio, L. Sugiura, H. Fujimoto, Y. Kokubun, K. Itaya, Applied Physics Letters, Vol. 70, pp. 3431-3433, 1997

・Room temperature pulsed operation of Nitride based multi-quantum-well laser diodes with cleaved facets on conventional c-face Sapphire substrates, K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi, and M. Ishikawa, Masayuki, Japanese Journal of Applied Physics, Vol. 35, Part 2, No. 10B, pp. L1315-L1317, 1996

・Impurity- induced disordering of AlGaInAs quantum wells by low temperature Zn diffusion, K. Itaya, M. Mondry, P.J. Floyd, L. Coldren, J. L. Merz, Journal of Electronic Materials, Vol. 25, No.4, pp. 565-569, 1996

・Lasing characteristics of InGaP/InGaAlP visible lasers grown by metalorganic chemical vapor deposition with Tertiarybutylphosphine, K. Itaya, A. Holmes, S.Keller, S. Hummel, L. Coldren, S. DenBaars, Japanese Journal of Applied Physics, Vol. 34, Part 2, No. 11B, pp. L1540-L1542, 1995

・Hybrid-type InGaAlP/GaAs distributed Bragg reflectors for InGaAlP light-emitting diodes, H. Sugawara, K. Itaya, G. Hatakoshi, Japanese Journal of Applied Physics, Vol. 33, Part 1, No. 11, pp. 6195-6198, 1994

・Emission properties of InGaAlP visible light-emitting diodes employing a multi quantum-well active layer, H. Sugawara, K. Itaya, G. Hatakoshi, Japanese J. of Applied Physics, Vol. 33, Part 1, No. 10, pp. 5784-5787, 1994

・InGaAlP visible light laser diodes & light-emitting diodes, K. Itaya, H. Sugawara, G. Hatakoshi, J. of Crystal Growth, Vol. 138, pp. 768-775, 1994

・Characteristics of a distributed Bragg reflector for the visible-light spectral region using InGaAlP and GaAs: Comparison of transparent- and loss- type structures, H. Sugawara, K. Itaya, G. Hatakoshi, J. of Applied Physics, Vol. 74, No. 5, pp. 3189-3193, 1993